4.0 Article

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Journal

ADVANCES IN CONDENSED MATTER PHYSICS
Volume 2017, Issue -, Pages -

Publisher

HINDAWI LTD
DOI: 10.1155/2017/9042823

Keywords

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Funding

  1. National Natural Science Foundation of China [11274343, 91222110]
  2. National Science Fund for Distinguished Young Scholars [51025103]
  3. Program for New Century Excellent Talents in University [NCET-13-0993]

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Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4K and 0.23% at 300K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

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