Journal
APPLIED PHYSICS LETTERS
Volume 111, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4998447
Keywords
-
Categories
Funding
- Natural Science Foundation of China [U1332134, 51675360, 51675502]
- Fundamental Research Funds for the Central Universities [3202006301, 3202006403]
- Qing Lan Project
- International Foundation for Science, Stockholm, Sweden
- Organization for the Prohibition of Chemical Weapons, The Hague, Netherlands [F/4736-2]
- Natural Science Foundation of Jiangsu Province [BK20150505]
- Tribology Science Fund of State Key Laboratory of Tribology [SKLTKF15A11]
- Open Research Fund of State Key Laboratory of High Performance Complex Manufacturing, Central South University [Kfkt2016-11]
- State Key Laboratory of solid lubrication [LSL-1607]
Ask authors/readers for more resources
As a member of transition metal dichalcogenides, MoS2 is an ideal low-dimensional piezoelectric material, which makes it attract wide attention for potential usage in next generation piezoelectric devices. In this study, the size-dependent piezoelectricity of MoS2 films with different grain sizes obtained at different temperatures by atomic layer deposition (ALD) was determined, which indicates that the grain size is critical to the piezoelectric constant. When the grain size is less than 120 nm, the piezoelectric constant increases with the increase in the grain size. Moreover, the piezoelectric constant first increases and then decreases with the increase in the film thickness. Therefore, piezoelectric constants of these MoS2 films can be modulated by changing the growth temperature and applying different ALD cycles. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available