4.6 Article

Refractive index sensing based on semiconductor nanowire lasers

Journal

APPLIED PHYSICS LETTERS
Volume 111, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4995456

Keywords

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Funding

  1. National Science Foundation [ECCS-1607250]
  2. International Postdoctoral Exchange Fellowship Program [20160007]
  3. Div Of Electrical, Commun & Cyber Sys
  4. Directorate For Engineering [1607250] Funding Source: National Science Foundation

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We demonstrate a refractive index (RI) sensor based on semiconductor nanowire lasers. It is shown that the TE01 mode is responsible for lasing and sensing with the lasing threshold of 3 mu J/mm(2) and the lasing peak width as narrow as 0.22 nm. A RI sensitivity of 21.2 nm/RIU (refractive index units), a figure of merit of approximately 100, and an RI detection limit of 1.4 x 10(-3) RIU are achieved. Published by AIP Publishing.

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