Journal
NATURE COMMUNICATIONS
Volume 8, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41467-017-02093-z
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Funding
- NSF of China [51525202, 21521063, 61574054, 61505051, 61625402, 61474040, 61725505, 11734016]
- Hunan province science and technology plan [2014FJ2001, 2014TT1004]
- National Key Basic Research Program of China [2015CB921600]
- Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
- Fundamental Research Funds for the Central Universities
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High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p-n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10(-14) A and a highest on-off ratio of up to 10(7). Optoelectronic characterizations show prominent photo-response, with a fast response time of 500 mu s, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.
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