Journal
NATURE COMMUNICATIONS
Volume 8, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/ncomms14947
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Funding
- French National Research Agency (ANR) MoS2ValleyControl project [ANR-14-CE26-0017-04]
- ANR Labcom project (LSTNM)
- ANR-National Natural Science Foundation of China (NNSFC) ENSEMBLE project [ANR-14-CE26-0028-01, NNSFC 61411136001]
- Institut Universitaire de France
- NEXT [ANR-10-LABX-0037]
- FEDER (EU)
- ANR
- Region Lorraine
- Grand Nancy
- Agence Nationale de la Recherche (ANR) [ANR-14-CE26-0028] Funding Source: Agence Nationale de la Recherche (ANR)
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Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately B235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
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