Journal
APPLIED PHYSICS LETTERS
Volume 111, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4996861
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Funding
- Engineering and Physical Sciences Research Council (EPSRC) UK [EP/M012379/1, EP/M011682/1]
- Singapore Agency for Science, Technology and Research (A*STAR)
- Clarendon Scholarship
- Mary Frances and Philip Wagley Graduate Scholarship
- Royal Academy of Engineering
- Leverhulme Trust
- Engineering and Physical Sciences Research Council [1642226, EP/M010589/1, 1659093, EP/M012379/1, EP/H047816/1, EP/M011682/1] Funding Source: researchfish
- EPSRC [EP/M011682/1, EP/H047816/1, EP/M010589/1, EP/M012379/1] Funding Source: UKRI
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We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5K, a statistical average splitting of 443 +/- 132 mu eV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 and 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single-photon sources. (C) 2017 Author(s).
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