Journal
IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS IV
Volume 10209, Issue -, Pages -Publisher
SPIE-INT SOC OPTICAL ENGINEERING
DOI: 10.1117/12.2262499
Keywords
fully depleted passivation; heterojunction; InGaAs; in-device passivation; InP passivation; p-n diodes; SWIR
Categories
Ask authors/readers for more resources
We design lattice matched InP/In0.53Ga0.47As mesa structured heterojunction p-n photodiodes with a novel passivation methodology based on a fully depleted thin p-InP layer. Mesa-structured detectors are targeted due to their competitive advantages for applications such as multicolor/hyperspectral imaging. Test detector pixels with different perimeter/area ratios are fabricated with and without etching thin InP passivation layer between pixels in order to comparatively examine passivating behavior. I-V characteristics of the test detectors are measured at room temperature. Based on the results from different sized pixel groups, bulk and surface dark current components are separated. Results show that thin InP layer decreases dark current by a factor of 3 while increasing photo current due to a higher carrier collection efficiency.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available