State-of-the-art technologies of gallium oxide power devices

Gallium oxide (Ga2O3) has gained increased attention for power devices due to its superior material properties and the availability of economical device-quality native substrates. This review illustrates recent advances in Ga2O3 device technologies, beginning with an overview of the social circumstances that motivate the development of new-generation switching devices. Following an introduction to the material properties of Ga2O3 from the viewpoint of power electronics, growth technologies of Ga2O3 bulk single crystals and epitaxial thin films are discussed. The fabrication and performance of state-of-the-art Ga2O3 transistors and diodes are then described. We conclude by identifying the directions and challenges of Ga2O3 power device development in the near future.