Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 34, Pages 28577-28585Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b08537
Keywords
thermoelectric materials; nonstoichiometry; bismuth telluride; hot deformation; point defect; Se deficiency
Funding
- Natural Science Foundation of China [61534001, 11574267, 51571177]
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Bismuth-telluride-based solid solutions are the unique thermoelectric (TE) materials near room temperature. Various approaches have been applied to enhance the thermoelectric performance, and much progress has been made in their p-type materials. However, for the n-type counterparts, little breakthrough has been obtained. We herein report on, enhancing thermoelectric performance of n-type bismuth-telluride-based alloys by nonstoichiometry to mediate the point defects, combined with one-time hot deformation. The improved power factor of 3.3 X 10(-3) W m(-1) K-2 and reduced lattice thermal conductivity contribute to a high figure-of merit, zT, of 1.2 at 450 K for n-type Bi2Te2.3Se0.69 alloys with Se deficiency. The high zT is comparable to that of Bi2Te2.3Se0.7 hot deformed three times, which is a practically complicated process. The results demonstrate that nonstoichiometry can be an effective and simple strategy in mediating intrinsic point defects and enhancing the thermoelectric performance of bismuth-telluride-based alloys.
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