Journal
ACS NANO
Volume 11, Issue 9, Pages 9143-9150Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b03994
Keywords
2D heterojunction; diverse functional diode; tunneling transistor; black phosphoius; molybdenum disulfide
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Funding
- Global Research Laboratory (GRL) Program at the Center for Hybrid Interface Materials (HIM) - Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF) [2016K1A1A2912707]
- Global Frontier R&D Program at the Center for Hybrid Interface Materials (HIM) - Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF) [2013M3A6B1078873]
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Diverse diode characteristics were observed in two (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through-thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a sad polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing Of 55 mV/dec was achieved in a top-gated 2D BP-MoS2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.
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