Journal
CURRENT APPLIED PHYSICS
Volume 17, Issue 10, Pages 1238-1243Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2017.06.003
Keywords
CZTSSe solar cells; Simulation; Back surface field; P-type silicon; S/(S plus Se)weight ratio
Funding
- Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) - Ministry of Science, ICT & Future Planning, KOREA [2016M1A2A2936781]
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The simulation of CZTSSe solar cells is presented in this paper. The simulation results are in reasonable agreement with the experimental data, indicating the reliability of simulation results. New structure is proposed to increase the functionality of the cell. Improved functional performances are achieved by inserting a P-Silicon (P-Si) layer as back surface field. Simulation results suggest that by inserting this P-Si layer, efficiency of the CZTSSe solar cell increases from 12.6% to 16.59%, which is a significant improvement. For the champion cell Jsc = 36.27 mA/cm(2), Voc = 0.625 V and FF = 73.11% has been achieved. (C) 2017 Elsevier B.V. All rights reserved.
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