4.8 Article

Halide Welding for Silver Nanowire Network Electrode

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 36, Pages 30779-30785

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b09839

Keywords

silver nanowire; sodium halide; welding transparent conductive electrode; sheet resistance

Funding

  1. Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program [NRF-2013M3A6A5073177]
  2. Basic Science Research Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning, Korea [NRF-2017R1A2B2005790, NRF-2014M3A9B8023471]
  3. National Research Foundation of Korea [2013M3A6A5073177] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

We developed a method of chemically welding silver nanowires (AgNWs) using an aqueous solution containing sodium halide salts (NaF, NaCl; NaBr, or NaI). The halide welding was performed simply by immersing the as-coated AgNW film into the sodium halide solution, and the resulting material was compared with those obtained using two typical thermal and plasmonic welding techniques. The halide welding dramatically reduced the sheet resistance of the AgNW electrode because of the strong fusion among nanowires at each junction while preserving the optical transmittance. The dramatic decrease in the sheet resistance was attributed to the autocatalytic addition of dissolved silver ions to the nanowire junction. Unlike thermal and plasmonic welding methods, the halide welding could be applied to AgNW films with a variety of deposition densities because the halide ions uniformly contacted the surface or junction regions. The optimized AgNW electrodes exhibited a sheet resistance of 9.3 Omega/sq at an optical transmittance of 92%. The halide welding significantly enhanced the mechanical flexibility of the electrode compared with the as coated AgNWs. The halide-welded AgNWs were successfully used as source drain electrodes in a transparent and flexible organic field-effect transistor (OFET). This simple, low-cost, and low-power consumption halide welding technique provides an innovative approach to preparing transparent electrodes for use in next-generation flexible optoelectronic devices.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available