4.8 Article

Temperature-Dependent Two-Dimensional Transition Metal Dichalcogenide Heterostructures: Controlled Synthesis and Their Properties

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 36, Pages 30821-30831

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b08313

Keywords

two-dimensional semiconductor; MoS2; WS2; Mo1-xWxS2; 2D heterosructures; magnetron sputtering and-CVD synthesis; growth mechanism

Funding

  1. Natural Science Foundation of China [51572092]
  2. Fundamental Research Funds for the Central Universities, SCUT [D2174770]

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Vertically stacked and laterally stitched heterostructures consisting of two-dimensional (2D) transition metal dichalcogenides (TMDCs) are predicted to possess novel electronic and optical properties, which offer opportunities for the development of next-generation electronic and optoelectronic devices. In the present work, we report the temperature dependent synthesis of 2D TMDC heterostructures on Si/SiO2 substrates, including MoS2-WS2, WS2-MoS2 WS2, Mo1-xWxS2 WS2, and Mo(1-x)WxS(2) alloyed bilayer heterostructures by ambient pressure chemical vapor deposition (CVD). Raman and photoluminescence mapping studies demonstrate that the as -produced heterostructures show distinct structural and optical modulation. Our results indicate that the evolution of various 2D heterostructures originates from the competition between the adsorption and desorption of Mo atoms and the diffusion of W atoms under various growth temperatures. This work sheds light on the design and fabrication of heterostructures using controllable interfaces and junctions of diverse TMDC atomic layers.

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