Journal
APPLIED PHYSICS LETTERS
Volume 111, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5000735
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We have demonstrated that depletion/enhancement-mode beta-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped beta-Ga2O3 nano-membrane as the channel. beta-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 10(10) and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low R-c, and wide bandgap make the beta-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications. Published by AIP Publishing.
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