Journal
IEEE PHOTONICS JOURNAL
Volume 9, Issue 3, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2017.2693207
Keywords
Light-emitting diodes (LEDs); fiber optics communications
Funding
- Ministry of Science and Technology of Taiwan [102-2221-E-008-092-MY3]
Ask authors/readers for more resources
We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire substrate for use as a light source for plastic optical fiber (POF) communications with the central wavelength at 500 nm. By significantly reducing the number of active InxGa1-xN/GaN multiple quantum wells and the thickness of the barrier layers down to 5 nm, such a device with an active diameter of 47 mu m demonstrates a record high 3-dB electrical-to-optical bandwidth, as high as 1 and 0.7 GHz, among all the reported highspeed visible LEDs under room temperature and 110 degrees C operation, respectively. TO-Can packaging with a lens is used to enhance the POF coupling efficiency. Very-high data rates of 5.5 and 5.8 Gbit/s are achieved over step index POF under nonreturn-to-zero and 4-pulse amplitude modulation, respectively. When the POF transmission distance reaches 50 m, there is degradation in the maximum data rate for both modulation schemes to 1.3 Gbit/s due to the dispersion and attenuation of the POF.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available