Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 27, Issue 35, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201702010
Keywords
conductive tunneling paths; electroforming free; low currents; low voltages; vertically integrated 1S1R
Categories
Funding
- U.S. Air Force Research Laboratory (AFRL) [FA8750-15-2-0044]
- National Science Foundation (NSF) [ECCS-1253073]
- Beijing Innovation Center for Future Chip (ICFC)
- National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A3A03012363]
- U.S. Department of Commerce, National Institute of Standards and Technology as part of Center for Hierarchical Materials Design (CHiMaD) [70NANB14H012]
- U.S. Air Force Office for Scientific Research (AFOSR) [FA9550-12-1-0038]
- National Research Foundation of Korea [2016R1A6A3A03012363] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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1S1R (1 selector and 1 memristor) is a laterally scalable and vertically stackable scheme that can lead to the ultimate memristor density for either memory or neural network applications. In such a scheme, the memristor device needs to be truly electroforming-free and operated at both low currents and low voltages in order to be compatible with a two-terminal selector. In this work, a new type of memristor with a preconditioned tunneling conductive path is developed to achieve the required performance characteristics, including truly electroforming-free, low current below 30 mu A (potentially <1 mu A), and simultaneously low voltage approximate to +/- 0.7 V in switching operations. Such memristors are further integrated with two types of recently developed selectors to demonstrate the feasibility of 1S1R integration.
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