4.7 Article

Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes

Journal

ANALYTICA CHIMICA ACTA
Volume 987, Issue -, Pages 105-110

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.aca.2017.07.066

Keywords

AlGaN/GaN; Chemical sensor; Calcium detection; Ion selective field effect transistor

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We demonstrate highly selective and sensitive potentiometric ion sensors for calcium ion detection, operated without the use of a reference electrode. The sensors consist of AlGaN/GaN heterostructure-based transistor devices with chemical functionalisation of the gate area using poly (vinylchloride)based (PVC) membranes having high selectivity towards calcium ions, Ca2+. The sensors exhibited stable and rapid responses when introduced to various concentrations of Ca2+. In both 0.01 M KCl and 0.01 M NaCl ionic strength buffer solutions, the sensors exhibited near Nernstian responses with detection limits of less than 10(-7) M, and a linear response range between 10(-7-)10(-2) M. Also, detection limits of less than 10(-6) M were achieved for the sensors in both 0.01 M MgCl2 and 0.01 M LiCl buffer solutions. AlGaN/GaN-based devices for Ca2+ detection demonstrate excellent selectivity and response range for a wide variety of applications. This work represents an important step towards multi-ion sensing using arrays of ion-selective field effect transistor (ISFET) devices. (C) 2017 Elsevier B.V. All rights reserved.

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