Journal
ADVANCED MATERIALS
Volume 29, Issue 35, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201702414
Keywords
dithienothiophene; dithioalkylbithiophene; organic field-effect transistors; solution-shearing
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Funding
- Ministry of Science and Technology of Taiwan (MOST)
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New 3,3-dithioalkyl-2,2-bithiophene (SBT)-based small molecular and polymeric semiconductors are synthesized by end-capping or copolymerization with dithienothiophen-2-yl units. Single-crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3-dialkyl-2,2-bithiophene, the resulting SBT systems are planar (torsional angle <1 degrees) and highly -conjugated. Charge transport is investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from approximate to 0.03 to 1.7 cm(2) V-1 s(-1). Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X-ray diffraction experiments.
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