Journal
CHINESE PHYSICS B
Volume 26, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/26/10/107301
Keywords
InAlN/GaN HEMT; back barrier; electron confinement; short-channel effect (SCE)
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Funding
- Natural Science Foundation of Hebei Province, China [F2013202256]
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In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al0.64In0.36N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al0.64In0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency (f(T)) and power gain cut-off frequency (f(max)) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.
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