Journal
ACS NANO
Volume 11, Issue 10, Pages 9869-9876Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b03660
Keywords
lead halide perovskites; CsPbBr3 nanoplates; electroluminescence; vapor growth
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Funding
- National Natural Science Foundation of China [51525202, 61574054, 51672076, 61505051]
- Hong Kong and Macau Scholars of the National Natural Science Foundation of China [61528403]
- Foundation for Innovative Research Groups of NSFC [21521063]
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Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr3, nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr3 nanoplates on prepatterned indium tin oxide (ITO) electrodes via.a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of similar to 3 V, a narrow full width at half maximum of 22 nm, and an external quantum efficiency of similar to 0.2%. Moreover, through scanning photo current microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr3 Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr3 Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.
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