Journal
APPLIED PHYSICS EXPRESS
Volume 10, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.10.101001
Keywords
-
Categories
Funding
- Grants-in-Aid for Scientific Research [15K13963] Funding Source: KAKEN
Ask authors/readers for more resources
Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO4 (SCAM) substrates, and their self-separation was achieved. The 320-mu m-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. This separation phenomenon occurred because of both the c-plane cleavability of SCAM and the difference in the thermal-expansion coefficients between GaN and SCAM. The dark-spot densities for the GaN films on the SCAM substrates were approximately 30% lower than those on sapphire substrates. These results indicate that SCAM substrates are promising for fabricating a high-quality freestanding GaN wafer at a low cost. (C) 2017 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available