Journal
FLATCHEM
Volume 5, Issue -, Pages 40-49Publisher
ELSEVIER
DOI: 10.1016/j.flatc.2017.07.002
Keywords
Graphene; Low-temperature synthesis; Chemical vapor deposition
Funding
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry Energy (MOTIE) [10044868]
- Korea Semiconductor Research Consortium (KSRC)
- Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2016M3A7B4909942]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2015R1D1A1A01058982]
- National Research Foundation of Korea (NRF) through the government of Korea (MSIP) [2016R1A4A1012929]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10044868] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2016R1A4A1012929, 2015R1D1A1A01058982] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Graphene is currently one of the most advanced materials under study for the development of a wide range of future device applications, owing to fascinating properties such as high carrier mobility, high electrical conductivity, as well as excellent mechanical flexibility and strength. A key requirement for the practical applications of graphene is the synthesis of large-area, high-quality films at low temperature, especially below 400 degrees C, which would enable the direct integration of graphene into the manufacturing technologies of complementary metal-oxide semiconductor (CMOS) or flexible devices. Chemical vapor deposition (CVD), a well-known and controllable method to prepare thin films, has attracted significant attention for the synthesis of large-area, uniform graphene samples. Nonetheless, significant efforts are still needed to improve our fundamental understanding of the graphene growth mechanism; a better understanding would enable reducing the growth temperature and optimizing the engineering parameters for the fabrication of new electronic devices. This article reviews recent progress in the low-temperature synthesis of graphene by CVD, with a special focus on the key technical factors that can be controlled to drastically reduce the synthesis temperature. Furthermore, the applications of graphene grown by low-temperature CVD are discussed. (C) 2017 Elsevier B.V. All rights reserved.
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