Journal
ADVANCED MATERIALS
Volume 29, Issue 37, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201702522
Keywords
graphene contacts; MoS2; short-channel effects; ultrashort channels
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Funding
- National Key RD program [2016YFA0300904]
- National Basic Research Program of China (973 Program) [2013CB934500, 2013CBA01602]
- National Science Foundation of China (NSFC) [61325021, 51572289, 11574361]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-SLH004]
- Strategic Priority Research Program (B), CAS [XDB07010100]
- National Key Laboratory of Science and Technology on Space Microwave [6142411010101]
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2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2. FETs with channel lengths scaling down to approximate to 4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.
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