Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 39, Pages 34064-34070Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b09710
Keywords
resistive switching; nanoindentation; conductive filament; precise control; uniformity; nanotransfer printing
Funding
- Ministry of Science and Technology of the People's Republic of China [2016YFA0203800]
- National Natural Science foundation of China [51231004]
- Beijing Innovation Center for Future Chip
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Redox-based memristor devices, which are considered to have promising nonvolatile memory, mainly operate through the formation/rupture of nanoscale conductive filaments. However, the random growth of conductive filaments is an obstacle for the stability of memory devices and the cell-to-cell uniformity. Here, we investigate the guiding effect of nanoindentation on the growth of conductive filaments in resistive memory devices. The nanoindented top electrodes generate an electric field concentration and the resultant precise control of a conductive filament in two typical memory devices, Ag/SiO2/Pt and W/Ta2O5/Pt. The nanoindented cells possess a much larger ON/OFF ratio, a sharper RESET process, a higher response speed, and better uniformity compared with the conventional cells. Our finding reflects that the use of large-scale nanotransfer printing unique way to improve the performance of resistive random access memory.
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