Journal
ADVANCED MATERIALS
Volume 29, Issue 37, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201702069
Keywords
electromechanical responses; ferroelectrics; thin-film epitaxy; three-state ferroelastic switching
Categories
Funding
- Army Research Office [W911NF-14-1-0104]
- Air Force Office of Scientific Research [FA9550-12-1-0471]
- U.S. Department of Energy, Office of Basic Energy Sciences (BES), Materials Project [EDCBEE]
- U.S. Department of Energy, Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division (MSED) [ERKCZ07]
- National Science Foundation [DMR-1451219, CMMI-1434147, OISE-1545907, DMR-1708615]
- Department of Energy, Office of Basic Energy Science [DE-SC0012375]
- Intel Corp.
- National Science Foundation Graduate Research Fellowship [DGE1106400]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1451219] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1434147] Funding Source: National Science Foundation
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Leveraging competition between energetically degenerate states to achieve large field-driven responses is a hallmark of functional materials, but routes to such competition are limited. Here, a new route to such effects involving domain-structure competition is demonstrated, which arises from strain-induced spontaneous partitioning of PbTiO3 thin films into nearly energetically degenerate, hierarchical domain architectures of coexisting c/a and a(1)/a(2) domain structures. Using band-excitation piezoresponse force microscopy, this study manipulates and acoustically detects a facile interconversion of different ferroelastic variants via a two-step, three-state ferroelastic switching process (out-of-plane polarized c(+) -> in-plane polarized a -> out-of-plane polarized c(-) state), which is concomitant with large nonvolatile electromechanical strains (approximate to 1.25%) and tunability of the local piezoresponse and elastic modulus (>23%). It is further demonstrated that deterministic, nonvolatile writing/erasure of large-area patterns of this electromechanical response is possible, thus showing a new pathway to improved function and properties.
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