Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 27, Issue 38, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201702211
Keywords
black phosphorus; field-induced n-doping; logic inverters; p-n junctions
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Funding
- Chinese Academy of Sciences
- National Natural Science Foundation of China [11574349, 61435010, 61575089]
- Natural Science Foundation of Jiangsu province [BK20150365]
- State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-sen Unversity)
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Black phosphorus (BP) has been considered as a promising two-dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole-transport-dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field-induced effect from the K+ center of the silicon nitride (SixNy). An obvious change from pristine p-type BP to n type is observed after the deposit of the SixNy on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as similar to 176 cm(2) V-1 s(-1). Moreover, high-performance in-plane BP p-n diode and further logic inverter were realized by utilizing the n-doping approach. The BP p-n diode exhibits a high rectifying ratio of similar to 10(4). And, a successful transfer of the output voltage from High to Low with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP-based nanoelectronics.
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