Journal
APPLIED PHYSICS LETTERS
Volume 111, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5008258
Keywords
-
Categories
Funding
- MEXT Program for the Strategic Research Foundation at Private Universities
- MEXT Private University Research Branding Project
- JSPS KAKENHI [15H02019, 26286045, 16H06416]
- JST CREST [JPMJCR16N2]
- Grants-in-Aid for Scientific Research [26286045, 16H06416, 15H02019] Funding Source: KAKEN
Ask authors/readers for more resources
We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 degrees C), a 150-nm-thick high-temperature layer (1250 degrees C), and a 3.2-mu m-thick medium-temperature layer (1110 degrees C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available