Journal
APPLIED PHYSICS LETTERS
Volume 111, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4997975
Keywords
-
Categories
Ask authors/readers for more resources
A stable deep depletion regime is demonstrated in metal oxide semiconductor capacitors using p-type oxygen-terminated (100) diamond as a semiconductor and Al2O3 deposited by Atomic Layer Deposition at 380 degrees C. Current voltage I(V) and capacitance voltage C(V) measurements were performed to evaluate the effectiveness of diamond semiconductor gate control. An effective modulation of the space charge region width is obtained by the gate bias, where the deep depletion regime is demonstrated for a positive gate bias. The deep depletion concept is described and proposed for MOSFET devices. Finally, a proof of concept of diamond deep depletion MOSFETs is presented. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available