Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 50, Issue 43, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aa865e
Keywords
x-ray diffraction; cubic GaN; gallium nitride; phase analysis
Categories
Funding
- Innovate UK [132135]
- EPSRC [EP/M010589/1, EP/N01202X/1]
- EPSRC [EP/N01202X/2, EP/M010589/1, EP/P03036X/1, EP/N01202X/1] Funding Source: UKRI
- Innovate UK [132135] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/N01202X/1, EP/M010589/1, EP/N01202X/2, EP/P03036X/1] Funding Source: researchfish
Ask authors/readers for more resources
Solving the green gap problem is a key challenge for the development of future LED-based light systems. A promising approach to achieve higher LED efficiencies in the green spectral region is the growth of III-nitrides in the cubic zincblende phase. However, the metastability of zincblende GaN along with the crystal growth process often lead to a phase mixture with the wurtzite phase, high mosaicity, high densities of extended defects and point defects, and strain, which can all impair the performance of light emitting devices. X-ray diffraction (XRD) is the main characterization technique to analyze these device-relevant structural properties, as it is very cheap in comparison to other techniques and enables fast feedback times. In this review, we will describe and apply various XRD techniques to identify the phase purity in predominantly zincblende GaN thin films, to analyze their mosaicity, strain state, and wafer curvature. The different techniques will be illustrated on samples grown by metalorganic vapor phase epitaxy on pieces of 4 '' SiC/Si wafers. We will discuss possible issues, which may arise during experimentation, and provide a critical view on the common theories.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available