Journal
CHEMICAL COMMUNICATIONS
Volume 53, Issue 87, Pages 11925-11928Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7cc05806c
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Funding
- National Natural Science Foundation of China [91622120, 21472196, 21521062, 21501183, 21601194]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB 12010400]
- Science and Technology Commission of Shanghai Municipality [16DZ1100300]
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The ITO/active material/Au sandwiched devices of a cobalt(II) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio ( 4103) and low operating voltages (< +/- 3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.
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