Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 41, Pages 36417-36422Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b11718
Keywords
semipolar GaN; MOCVD; light-emitting diodes; InGaN; atom probe tomography
Funding
- UCSB-Collaborative Research in Engineering, Science and Technology (CREST) Malaysia project
- Solid State Lighting and Energy Center at UCSB
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We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density (11-22) GaN/patterned sapphire templates. The In0.03Ga0.97N barriers were clearly identified, and no InGaN clusters were observed by atom probe tomography measurements. The semipolar (11-22) 550 run InGaN LEDs (0,1 mm(2) size) show an output power of 2.4 mW at 100 mA and a peak external quantum efficiency of 1.3% with a low efficiency drop. In addition, the LEDs exhibit a small blue-shift of only 11 nm as injection current increases from 5 to 100 mA. These results suggest the potential to produce high efficiency semipolar InGaN LEDs with long emission wavelength on large-area sapphire substrates with economical feasibility.
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