Low-Temperature Steam Annealing of Metal Oxide Thin Films from Aqueous Precursors: Enhanced Counterion Removal, Resistance to Water Absorption, and Dielectric Constant

Aqueous solution deposition has emerged as a potentially scalable, high-throughput route to functional metal oxide thin films. Aqueous routes, however, generally require elevated processing temperatures to produce fully condensed films that are resistant to water absorption. Herein, we report a low-processing-temperature method for preparing more fully condensed, stable metal oxide films from aqueous precursors. We show that a steam anneal at <= 200 degrees C reduces residual nitrates in zinc oxide, yttrium aluminum oxide, and lanthanum zirconium oxide (LZO) films. An in-depth study on LZO dielectric films reveals steam annealing also reduces residual chloride content, increases resistance to post-anneal water absorption, eliminates void formation, and enhances the dielectric constant. This investigation demonstrates that steam annealing directly affects the decomposition temperatures and chemical evolution of aqueous precursors, suggesting a general means for producing high-quality films at low processing temperatures.