Manipulable and Hybridized, Ultralow-Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods

Manipulating stimulated-emission light in nanophotonic devices on scales smaller than their emission wavelengths to meet the requirements for optoelectronic integrations is a challenging but important step. Surface plasmon polaritons (SPPs) are one of the most promising candidates for sub-wavelength optical confinement. In this study, based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER), III-Nitride-based plasmonic nanolaser with hybrid metal-oxide-semiconductor (MOS) structures is designed. Using geometrically elliptical nanostructures fabricated by nanoimprint lithography, elliptical nanolasers able to demonstrate single-mode and multimode lasing with an optical pumping power density as low as 0.3 kW cm(-2) at room temperature and a quality Q factor of up to 123 at a wavelength of approximate to 490 nm are achieved. The ultralow lasing threshold is attributed to the SPP-coupling-induced strong electric-field-confinement in the elliptical MOS structures. In accordance with the theoretical and experimental results, the size and shape of the nanorod are the keys for manipulating hybridization of the plasmonic and photonic lasing modes in the SPASER. This finding provides innovative insight that will contribute to realizing a new generation of optoelectronic and information devices.