Cuprous oxide (Cu2O) thin films prepared by reactive d.c. sputtering technique

Synthesis of cuprous oxide (Cu2O) by direct current (DC) reactive magnetron sputtering technique has been demonstrated. Ar:O-2 gas ratios in the plasma and the substrate temperature were the decisive parameters for the formation of unblemished Cu2O polycrystalline films. The optimal deposition parameters are: Ar:O-2 similar to 90:10; T-s similar to 623 K and d.c. power similar to 0.6 kV at 1.2 mA/cm(2). Optical spectroscopy, photo luminescence, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman measurements were carried out to characterize the films. Predominant p -type conductivity in the Cu2O films was confirmed from Hall measurement. (C) 2017 Elsevier Ltd. All rights reserved.