Journal
VACUUM
Volume 140, Issue -, Pages 30-34Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2016.09.018
Keywords
Programmable metallization cell; Solid electrolyte; Silver; Nickel; Iridium; Gadolinium oxide
Funding
- Ministry of Science and Technology, R.O.C. [MOST 103-2221-E-182-061-MY3, MOST 105-2628-E-182-001-MY3]
- Chang Gung Memorial Hospital, R.O.C. [CMRPD2E0031, CMRPD2F0121, BMRPA74]
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This study investigated the effects of the bottom electrode (BE) on the resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with gadolinium oxide and aluminum oxide (GdxOy/AlxOy) solid electrolytes (SEs). The RS mechanisms of memories with different bottom electrodes were proposed based on the temperature dependence of the resistance at low resistance state (LRS) and current voltage (I-V) fitting at high resistance state (HRS). The Schottky emission was dominant in the resistive switching of the memory with an iridium bottom electrode (Ir-BE), whereas in the memories with n(+)-Si and nickel (Ni) bottom electrodes, silver and both silver and nickel ions dominated the resistive switching, respectively. Additionally, the Ag-PMC with Ni-BE had a high resistance ratio of more than 107 as a result of the extremely low resistance of roughly 50 Omega at LRS. The Ag-PMCs with GdxOy/AlxOy SEs and Ni-BE exhibited a retention behavior of more than 10(4) s and an endurance of more than 500 cycles with a resistance ratio of at least four orders of magnitude, which is promising for future high-density nonvolatile memory applications. (C) 2016 Elsevier Ltd. All rights reserved.
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