Journal
VACUUM
Volume 141, Issue -, Pages 103-108Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2017.03.031
Keywords
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Funding
- Department of the Defense, Defense Threat Reduction Agency [HDTRA1-17-1-011]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2015R1D1A1A01058663]
- Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2015M3A7B7045185]
- The research and development project for innovation technique of energy conservation of the New Energy and Industrial Technology Development Organization (NEDO), Japan
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We report on the determination of band offsets in rf-sputtered Aluminum Zinc Oxide (AZO)/single crystal beta-Ga2O3 (AZO/Ga2O3) heterostructures using X-Ray Photoelectron Spectroscopy. The bandgaps of the materials were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.2eV for AZO. The valence band offset was determined to be -0.61eV +/- 0.23eV, while the conduction band offset was determined to be -0.79 +/- 0.34 eV. The AZO/Ga2O3 system has a nested, or straddling, gap (type I) alignment and provides a convenient method for reducing contact resistance on Ga2O3-based device structures. (C) 2017 Elsevier Ltd. All rights reserved.
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