Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 46, Pages 40420-40427Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b11191
Keywords
memristor; analog resistive switching; silicon nitride; synapse; spike-timing-dependent plasticity
Funding
- National Research Foundation of Korea (NRF) - Korean Ministry of Science, ICTAMP
- Future Planning (MSIP) [2015R1A2A1A01007307]
- National Research Foundation of Korea [2015R1A2A1A01007307] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this paper, we present a synapse function using analog resistive-switching behaviors in a SiNx-based memristor with a complementary metal-oxide-semiconductor compatibility and expandability to three-dimensional crossbar array architecture. A progressive conductance change is attainable as a result of the gradual growth and dissolution of the conducting path, and the series resistance of the AlOy layer in the Ni/SiNx/AlOy/TiN memristor device enhances analog switching performance by reducing current overshoot. A continuous and smooth gradual reset switching transition can be observed with a compliance current limit (>100 mu A), and is highly suitable for demonstrating synaptic characteristics. Long-term potentiation and long-term depression are obtained by means of identical pulse responses. Moreover, symmetric and linear synaptic behaviors are significantly improved by optimizing pulse response conditions, which is verified by a neural network simulation. Finally, we display the spike-timing-dependent plasticity with the multipulse scheme. This work provides a possible way to mimic biological synapse function for energy-efficient neuromorphic systems by using a conventional passive SiNx layer as an active dielectric.
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