Journal
ADVANCED MATERIALS
Volume 29, Issue 44, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201704062
Keywords
inorganic lead halide perovskite; organic semiconductors; photodetectors; phototransistors; quantum dots
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Funding
- National Nature Science Foundation of China [51373123, 51603151]
- National Key Research and Development Program of China [2017YFA0103900, 2017YFA0103904]
- Science and Technology Foundation of Shanghai [17JC1404600]
- Fundamental Research Funds for the Central Universities
- 1000 youth talent plan
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All-inorganic lead halide perovskite quantum dots (IHP QDs) have great potentials in photodetectors. However, the photoresponsivity is limited by the low charge transport efficiency of the IHP QD layers. High-performance phototransistors based on IHP QDs hybridized with organic semiconductors (OSCs) are developed. The smooth surface of IHP QD layers ensures ordered packing of the OSC molecules above them. The OSCs significantly improve the transportation of the photoexcited charges, and the gate effect of the transistor structure significantly enhances the photoresponsivity while simultaneously maintaining high I-photo/I-dark ratio. The devices exhibit outstanding optoelectronic properties in terms of photoresponsivity (1.7 x 10(4) A W-1), detectivity (2.0 x 10(14) Jones), external quantum efficiency (67000%), I-photo/I-dark ratio (8.1 x 10(4)), and stability (100 d in air). The overall performances of our devices are superior to state-of-the-art IHP photodetectors. The strategy utilized here is general and can be easily applied to many other perovskite photodetectors.
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