Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 47, Pages 41120-41125Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b12386
Keywords
NiTiO3/g-C3N4; Z-scheme; photoelectrochemical; photocatalytic; visible LED light
Funding
- Science and Technology Development Plan Project of Shandong Province [2014GSF117015]
- National Basic Research Program of China [2013CB632401]
- National Nature Science Foundation of China [51402145]
- U.S. Department of Energy (DOE), Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Office
- DOE Office of Science [DE-AC02-06CH11357]
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Direct Z-scheme NiTiO3/g-C3N4 heterojunctions were successfully assembled by using simple calcination method and the photoelectrochemical and photocatalytic performance were investigated by light emitting diode (LED). The photoanode composed by the heterojunction with about 50 wt % NiTiO3 content exhibits the best photo-electrochemical activity with photoconversion efficiency up to 0.066%, which is 4.4 and 3.13 times larger than NiTiO3 or g-C3N4. The remarkably enhanced photoelectrochemical and photocatalytic activity of the heterojunction can be due to the efficiently photogenerated electron hole separation by a Z-scheme mechanism.
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