Journal
CERAMICS INTERNATIONAL
Volume 43, Issue 17, Pages 15205-15213Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2017.08.055
Keywords
High-k dielectrics; Metal oxides; Sol-gel; Thin-film transistor; Low-temperature; Photochemical deposition
Categories
Funding
- National Natural Science Foundation of China [61106086]
- Shandong Province Young and Middle-Aged Scientists Research Awards Fund [BS2011DX014]
- Shandong Province Excellent Talent Fund [2015ZRE27408]
- Qilu University of Technology startup funding for outstanding talents [0412048415]
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A facile, low-cost, and room-temperature UV-ozone (UVO) assisted solution process was employed to prepare zirconium oxide (ZrOx) films with high dielectric properties. ZrOx films were deposited by a simple spin-coating of zirconium acetylacetonate (ZrAcAc) precursor in the environment-friendly solvent of ethanol. The smooth and amorphous ZrOx films by UVO exhibit average visible transmittances over 90% and energy bandgap of 5.7 eV. Low leakage current of 6.0 x 10(-8) A/cm(2) at 3 MV/cm and high dielectric constant of 13 (100 Hz) were achieved for ZrOx dielectrics at the nearly room temperature. Moreover, a fully room-temperature solution-processed oxide thin films transistor (TFT) with UVO assisted ZrOx dielectric films achieved acceptable performances, such as a low operating voltage of 3 V, high carrier mobility of 1.65 cm(2) V-1 s(-1), and on/off current ratio about 10(4)10(5). Our work indicates that simple room-temperature UVO is highly potential for low-temperature, solution-processed and high-performance oxide films and devices.
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