Journal
2D MATERIALS
Volume 4, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa8ab5
Keywords
tungsten diselenide; transition metal dichalcogenides; van der Waals epitaxy; nucleation and growth; kinetic Monte Carlo simulation
Categories
Funding
- Center for Low Energy Systems Technology (LEAST)
- STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program- MARCO
- DARPA
- SWAN Center, a SRC center - Nanoelectronics Research Initiative
- NIST
- NSF [1407765]
- Texas Higher Education Coordinating Board's Norman Hackerman Advanced Research Program
- Texas Instruments Distinguished Chair in Nanoelectronics
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MSIP) [2013K1A4A3055679]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1407765] Funding Source: National Science Foundation
- National Research Foundation of Korea [2013K1A4A3055679] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, the fundamental nucleation and growth behavior of WSe2 is investigated through a detailed experimental design combined with on-lattice, diffusion-based first principles kinetic modeling to enable large area TMD growth. A three-stage adsorption-diffusion-attachment mechanism is identified and the adatom stage is revealed to play a significant role in the nucleation behavior. To limit the nucleation density and promote 2D layered growth, it is necessary to have a low metal flux in conjunction with an elevated substrate temperature. At the same time, providing a Se-rich environment further limits the formation of W-rich nuclei which suppresses vertical growth and promotes 2D growth. The fundamental understanding gained through this investigation has enabled an increase of over one order of magnitude in grain size for WSe2 thus far, and provides valuable insight into improving the growth of other TMD compounds by MBE and other growth techniques such as chemical vapor deposition (CVD).
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