Journal
JOURNAL OF INFRARED AND MILLIMETER WAVES
Volume 36, Issue 5, Pages 589-593Publisher
SCIENCE PRESS
DOI: 10.11972/j.issn.1001-9014.2017.05.013
Keywords
CdZnTe crystal; magneto-photoluminescence; stress; shallow-donor
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Funding
- Major State Basic Research Development Program of China [2014CB643901]
- Major Program for the Fundamental Research of Shanghai Committee of Science and Technology [14YF1404100, 16JC1402400]
- National Natural Science Foundation of China [11274329, 61675224]
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This paper reports photoluminescence (PL) and magneto-PL study of CdZnTe single crystal grown by Bridgman method. Magneto-PL measurements on two CdZnTe samples in the sample crystal were realized at low temperature with sufficiently high spectral resolution and signal-to-noise ratio. PL spectra reveal that the Te inclusions near the CdZnTe surface affects obviously the PL processes energetically below 1.5 eV. Further analysis with curve-fitting process shows that (1) stress distribution exists inside the CdZnTe sample without Te inclusions, and the stress causes the splitting of the heavy and light-hole subband. ( 2) The 1.57-eV PL feature originates from the shallow-donor to valence band recombination.
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