4.6 Article

Temperature-feedback direct laser reshaping of silicon nanostructures

Journal

APPLIED PHYSICS LETTERS
Volume 111, Issue 24, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5007277

Keywords

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Funding

  1. Russian Science Foundation [17-19-01325]
  2. RFBR [16-29-05317, 17-02-00538]

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Direct, laser reshaping of nanostructures is a cost-effective and fast, approach to create or tune various designs for nanophotonics. However, the narrow range of required laser parameters along with the lack of in-situ temperature control during the nanostructure reshaping process limits its reproducibility and performance. Here, we present an approach for direct laser nanostructure reshaping with simultaneous temperature control. We employ thermally sensitive Raman spectroscopy during local laser melting of silicon pillar arrays prepared by self-assembly microsphere lithography. Our approach allows establishing the reshaping threshold of an individual nanostructure, resulting in clean laser processing without overheating of the surrounding area. Published by AIP Publishing.

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