Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 46, Pages 39895-39900Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b09417
Keywords
hexagonal boron nitride; chemical vapor deposition; electrical homogeneity; conductive AFM; polycrystalline
Funding
- Ministry of Education of China
- National Natural Science Foundation of China [61502326, 41550110223, 11661131002]
- Jiangsu Government [BK20150343]
- Ministry of Finance of China [SX21400213]
- Chinese Ministry of Science and Technology [2015CB932700]
- STC Center for Integrated Quantum Materials, NSF [DMR-1231319]
- NSF [DMR/ECCS-1509197]
- SUTD-MIT
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1509197] Funding Source: National Science Foundation
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Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.
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