4.8 Article

Direct Z-scheme g-C3N4/WO3 photocatalyst with atomically defined junction for H2 production

Journal

APPLIED CATALYSIS B-ENVIRONMENTAL
Volume 219, Issue -, Pages 693-704

Publisher

ELSEVIER
DOI: 10.1016/j.apcatb.2017.08.018

Keywords

Z-scheme; Internal electric field; Carbon nitride; Atomic structure; Photocatalytic H-2 production

Funding

  1. National Program on Key Basic Research Project [2014CB921002]
  2. Chinese Academy of Sciences [XDB07030200]
  3. National Natural Science Foundation of China [51522212, 51421004]

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Mimicking the natural photosynthesis, artificial Z-scheme photocatalysis enables more efficient utilization of solar energy for sustainable chemical fuel production. Herein, a direct Z-scheme g-C3N4/WO3 photocatalyst with host-guest architecture is rationally designed, demonstrating significantly enhanced activities of photocatalytic H-2 production. Unprecedented atomic-scale imaging of both the in-plane and interlayer structures in g-C3N4 revealed the well-defined interfaces in such architecture, where the 2D g-C-3 N-4 layers stand vertically on the flat facets of WO3 nanocuboids. Through both experimental and theoretical investigations, mechanistic insights regarding the direct Z-scheme electron transfer from WO3 to g-C-3 N-4 were obtained. The Z-scheme electron transfer was driven by the internal electric field at the interfacial junction, defined by the covalent W-O-N-(C)(2) interaction. Under simultaneous light excitation, this atomically defined junction induces a rapid electron injection from WO3 to inhibit the fast recombination kinetics within g-C-3 N-4 and prolong the charge carrier lifetime of g-C-3 N-4, thereby liberating more excited electrons with high reducing power for H-2 production. (C) 2017 Elsevier B.V. All rights reserved.

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