Journal
THIN SOLID FILMS
Volume 642, Issue -, Pages 276-280Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2017.09.047
Keywords
Thermoelectric; Annealing; Chemical vapour deposition nc-Si:H
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Funding
- NANOTEG Project [ENIAC/002/2010]
- TransFlexTeg [645241, H2020-ICT-2014-1]
- FEDER funds through COMPETE 2020 Programme
- National Funds through FCT - Portuguese Foundation for Science and Technology [POCI-01-0145-FEDER-007688, UID/CTM/50025]
- Air Force Office of Scientific Research [FA9550-15-1-0079]
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The influence of post-deposition thermal annealing on the thermoelectric properties of n-and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7 x 10(-5) to 4 x 10(-4) W/(m.K-2) as the annealing temperature, under vacuum, increased up to 400 degrees C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 mu V/K and -320 mu V/K were achieved for p- and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (< 10 W.m(-1).K-1) at room temperature.
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