Journal
THIN SOLID FILMS
Volume 628, Issue -, Pages 31-35Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2017.02.053
Keywords
Alumium gallium nitride; Gallium nitride; High electron mobility transistors; Surface treatment; Tetramethylammonium hydroxide; Gate recess
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Funding
- ETRI and Institute for Information & Communications Technology Promotion (IITP) - Korea government (MISP) [B0132-16-1006]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [B0132-16-1006] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic transconductance and saturation current, as well as more uniform off-state behavior with recluced off-current by a factor of 3.5 and gate leakage current by a factor of 42 in the devices with TMAH treatment. The analyses based on atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy show that the TMAH treatment effectively reduces the roughness of the recess etched AlGaN surface and removes the native oxide layer on the AlGaN surface, suggesting a simple and viable route towards the fabrication of gate-recessed HEMTs based on AlGaN/GaN heterostructure with improved controllability and uniformity.(C) 2017 Elsevier B.V. All rights reserved.
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