Journal
PHYSICAL REVIEW B
Volume 96, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.96.241203
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Funding
- CREST
- PRESTOJST [JPMJPR17I3]
- JSPSKAKENHI [24224009, 16K13705, 17H02914]
- Grants-in-Aid for Scientific Research [16K13705, 17H02914] Funding Source: KAKEN
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A spontaneous photocurrent, termed a shift current, can flow in noncentrosymmetric bulk crystals due to the topological nature of the constituting electronic bands. A shift current with a less dissipative character may have remarkable advantages over the conventional drift photocurrent driven by a built-in potential or external electric field. We revisit the generation and transport of the shift current in a prototypical ferroelectric semiconductor SbSI near its band-gap energy. It is revealed that a switchable shift current is steadily generated by photoexcitation down to low temperatures, appears over a distance of millimeter range in a highly insulating bulk without noticeable decay, and largely exceeds the polarization charge in the sample, reflecting its Berry phase origin.
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