Journal
APPLIED PHYSICS LETTERS
Volume 111, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5009003
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Funding
- National Science Foundation (NSF), ECCS Award [1711322]
- NSF IGERT fellowship [1250052]
- University of South Carolina through an ASPIRE Grant
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1711322] Funding Source: National Science Foundation
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We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n(+)-SiC UV phototransistor fabricated with a Schottky (EG)/SiC junction grown using a SiF4 precursor. The phototransistor showed responsivity as high as 25 A/W at 250 nm in the Schottky emitter (SE) mode. The Schottky collector (SC) mode showed a responsivity of 17 A/W at 270 nm with a visible rejection (270nm:400nm)>10(3). The fastest response was seen in the SC-mode, with 10 ms turn-on and 47 ms turn-off, with a noise equivalent power of 2.3 fW at 20 Hz and a specific detectivity of 4.4 x 10(13) Jones. The high responsivity is due to internal gain from bipolar action. We observe additional avalanche gain from the device periphery in the SC-mode by scanning photocurrent microscopy but not in the SE-mode. This high-performance visible-blind photodetector is attractive for advanced applications such as flame detection. Published by AIP Publishing.
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