Journal
ELECTRONICS LETTERS
Volume 53, Issue 25, Pages 1661-1662Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2017.3355
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Funding
- Russian Science Foundation (RSCF) [16-19-10688]
- Russian Science Foundation [16-19-10688] Funding Source: Russian Science Foundation
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Operation of single-stage, single-pump E-band bismuth-doped fibre amplifier with gain, noise figure and efficiency comparable to the state-of-the-art erbium-doped fibre amplifier of the same complexity and the gain bandwidth of 50 nm is demonstrated. The amplification of 10 Gbit/s intensity modulation/direct detection signal with power penalty below 1.5 dB is reported.
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